by RANDEEP » Wed Mar 18, 2009 8:37 pm
B.E/B.TECH. DEGREE EXAMINATION ,NOV/DEC 2006
Second semester ,EI
Material Science
Time: 3Hrs
Maximum:100 marks
PART A (10 X 2 =20)
1. What is the difference between the unit cell and the primitive cell of a crystal?
2.The lattice parameter of FCC aluminium is 4.05 Armstrong.Calculate the interplaner distance of (110) plane.
3. Define density of states of electrons.
4. What is called the effective mass of an electron?
5. Mention any two advantages of compound semiconductors over elemental semiconductors.
6. State the law of mass action for semiconductors.
7. List any two applictions of ferrites.
8. Differentiate active and passive dielectrics.
9. What are traps in optical materials?
10. Define photoconductivity.
PART B (5 X 16 =80)
11 (a) (i) Distinguish between different crystal system and related bravais lattices.
(ii) Explain all the symmetry elements of a cubic crystal.
OR
(b) Deduce the packing factor of a hcp crystal along wih its c/a ratio.
12 (a) (i) Outline the properties of fermi-Dirac distribution function.Using this function,obtain an expression for the Fermi energy of free electrons.
(ii) Briefly outline the origin of energy band gap in solids,
OR
(b) (i) Discuss hte properties of type-I and type -II super conductors.
(ii) Enumerate and outline any four applications of superconductors.
13 (a) (i) Derive an expression for the carrier concentration of a intrinsic semiconductor.
(ii) Obtain a temperature dependent equation for the Fermi energy of a semiconductor.
OR
(b) (i) Explain in detail the theory and an experimental procedure using Langevin's theory.
(ii) Outline the significance of hysterisis energy product with necessary diagram
OR
(b) Deduce an equation for the internal field of a dielectric medium.Hence obtain the Clausis -Mossotti equation.
15 (a) (i) Explain the fundamental energy transition processes of phosphorescence and fluorscence.
(ii)Discuss the production and applications of various colour centers in crystals
OR
(b) (i) Draw the biasing circuit of a photoconductor and derive an expression for the photoconductive gain of the device.
(ii) A smiconductor has an energy gap of 3.6 eV .Can orange light of wavelength 580 nm be used for photo conduction in the semiconductor? (velocity of light = 3X 10 ^ 8 m/s ;Plancks constant = 4.135 X 10 ^15 eV -sec)